منابع مشابه
Demonstration of Si homojunction far-infrared detectors
A 48 mm cutoff wavelength (lc) Si far-infrared ~FIR! detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p emitter layers and intrinsic layers! is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.360.1 A/W at 27.5 mm and detectivity...
متن کاملFragment tracking with Si microstrip detectors
The performance of a new set-up of double-sided silicon micro-strip detectors (DSSD) developed for the R3B project [1] has been investigated in a production run aimed at measuring two-proton fragmentation of Mg and Ne [2]. To record simultaneously protons and the residual nuclei in micro-strip detectors requires both low-noise and wide-range integrated-circuit amplifiers. The present front-end ...
متن کاملNoise Spectra of SIU - GaAs Pad Detectors With Guard Rings
This paper presents current noise characterization of circular pad Schottky barrier diodes with guard rings. The diodes were fabricated from undopped semi-insulating GaAs, SIU-GaAs, at the University of Glasgow. Current noise spectra were obtained for the detectors for two pad sizes, with reverse bias applied. Three measurements were also made on one of the detectors under forward bias. The noi...
متن کاملNew Contact Development for Si(Li) Orthogonal-Strip Detectors
At present, the contacts generally used for lithium-drifted silicon detectors consist of a diffused lithium layer (n-type) and a gold surface barrier (p-type). These contacts work well for unsegmented detectors. However, they both have disadvantages if used for segmented detectors. For this reason, we are developing new types of contacts that will be more robust and easier to segment. To replac...
متن کاملDevelopment of Double-Sided Microstructured Si(Li) Detectors
A new technique for manufacturing double-sided structured Si(Li) detectors has been established. The position-sensitive structure on the implanted p–contact can be made smaller than 100 m by photolithography followed by plasma etching of grooves to separate the position elements. By modifying this technique position-sensitive structures on a thin ( 30 m) Li-diffused contact were created. Areas ...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1996
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(96)00622-5